FQB19N20CTM Mosfets_Inventory of electronic components_Electronic equipment_Power management

FQB19N20CTM


：	FQB19N20CTM
：	Mosfets
：	onsemi
：	N-Channel 200 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	200V
Drain-Source On Resistance-Max:	0.17Ω
Rated Power Dissipation:	139\|W
Qg Gate Charge:	40.5nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

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31866.24

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