FQD19N10TM Mosfets_Inventory of electronic components_Electronic equipment_Power management

FQD19N10TM


：	FQD19N10TM
：	Mosfets
：	onsemi
：	N-Channel 100 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	0.1Ω
Rated Power Dissipation:	2.5\|W
Qg Gate Charge:	19nC
Package Style:	TO-252-3 (DPAK)
Mounting Method:	Surface Mount

PDF(1)

2500

6.16

15400

5000

5.8768

29384

7500

5.5835

41876.25

10000

5.3002

53002

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FQD19N10TM

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