FQD1N80TM Mosfets_Inventory of electronic components_Electronic equipment_Power management

FQD1N80TM


：	FQD1N80TM
：	Mosfets
：	onsemi
：	N-Channel 800 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	800V
Drain-Source On Resistance-Max:	20Ω
Rated Power Dissipation:	2.5\|W
Qg Gate Charge:	7.2nC
Package Style:	TO-252-3 (DPAK)
Mounting Method:	Surface Mount

PDF(1)

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