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IMW120R220M1HXKSA1

  • IMW120R220M1HXKSA1
  • IMW120R220M1HXKSA1
IMW120R220M1HXKSA1
Mosfets
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:1200V
Drain-Source On Resistance-Max:294mΩ
Rated Power Dissipation:75W
Qg Gate Charge:8.5nC
Gate-Source Voltage-Max [Vgss]:23V
Drain Current:13A
Turn-on Delay Time:5ns
Turn-off Delay Time:10ns
Rise Time:1.4ns
Fall Time:14ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:4.5V
Technology:SiC
Input Capacitance:289pF
Package Style: TO-247-3
Mounting Method:Through Hole
PDF(1)

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