TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain-Source On Resistance-Max: | 294mΩ |
Rated Power Dissipation: | 75W |
Qg Gate Charge: | 8.5nC |
Gate-Source Voltage-Max [Vgss]: | 23V |
Drain Current: | 13A |
Turn-on Delay Time: | 5ns |
Turn-off Delay Time: | 10ns |
Rise Time: | 1.4ns |
Fall Time: | 14ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4.5V |
Technology: | SiC |
Input Capacitance: | 289pF |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
30
88.6779
2660.337
480
72.4838
34792.224
720
71.6241
51569.352
960
70.916
68079.36