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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 142mΩ |
| Rated Power Dissipation: | 75W |
| Qg Gate Charge: | 15nC |
| Gate-Source Voltage-Max [Vgss]: | 23V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 9.2ns |
| Turn-off Delay Time: | 12.6ns |
| Rise Time: | 11.4ns |
| Fall Time: | 6.2ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4.5V |
| Technology: | SiC |
| Input Capacitance: | 496pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
30
171.1958
5135.874
90
145.2611
13073.499
120
143.6831
17241.972
300
138.9594
41687.82
450
136.9566
61630.47
