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IPAN80R360P7XKSA1

  • IPAN80R360P7XKSA1
  • IPAN80R360P7XKSA1
IPAN80R360P7XKSA1
Mosfets
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:0.36Ω
Rated Power Dissipation:30W
Qg Gate Charge:30nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:13A
Turn-on Delay Time:10ns
Turn-off Delay Time:40ns
Rise Time:6ns
Fall Time:6ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:CoolMOS
Input Capacitance:930pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
PDF(1)

50

28.8985

1444.925

1000

23.5788

23578.8

1500

23.2951

34942.65

2000

23.1432

46286.4

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