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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IPB015N04LGATMA1
IPB015N04LGATMA1
:
IPB015N04LGATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
40V
Drain-Source On Resistance-Max:
1.5mΩ
Rated Power Dissipation:
250|W
Qg Gate Charge:
260nC
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount
PDF(1)
1000
40.1159
40115.9
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