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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IPB016N06L3GATMA1
IPB016N06L3GATMA1
:
IPB016N06L3GATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
60V
Drain-Source On Resistance-Max:
1.6mΩ
Rated Power Dissipation:
250|W
Qg Gate Charge:
125nC
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount
PDF(1)
1000
45.2646
45264.6
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