TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 0.15Ω |
Rated Power Dissipation: | 195.3W |
Qg Gate Charge: | 86nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 22.4A |
Turn-on Delay Time: | 12.4ns |
Turn-off Delay Time: | 52.8ns |
Rise Time: | 7.6ns |
Fall Time: | 5.6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | CoolMOS |
Input Capacitance: | 2340pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
1000
41.1173
41117.3