IPD122N10N3GATMA1 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IPD122N10N3GATMA1


：	IPD122N10N3GATMA1
：	Mosfets
：	Infineon
：	Single N-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	12.2mΩ
Rated Power Dissipation:	94\|W
Qg Gate Charge:	26nC
Package Style:	TO-252-3 (DPAK)
Mounting Method:	Surface Mount

PDF(1)

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