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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IPD30N08S2L21ATMA1
IPD30N08S2L21ATMA1
:
IPD30N08S2L21ATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
75V
Drain-Source On Resistance-Max:
20.5mΩ
Rated Power Dissipation:
136|W
Qg Gate Charge:
56nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2500
12.2443
30610.75
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