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IPD50N06S4L12ATMA2

  • IPD50N06S4L12ATMA2
  • IPD50N06S4L12ATMA2
IPD50N06S4L12ATMA2
Mosfets
Infineon
IPD50N06S4L Ser
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:60V
Drain-Source On Resistance-Max:12mΩ
Rated Power Dissipation:50W
Qg Gate Charge:30nC
Gate-Source Voltage-Max [Vgss]:16V
Drain Current:50A
Turn-on Delay Time:6ns
Turn-off Delay Time:25ns
Rise Time:2ns
Fall Time:5ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:1.7V
Technology:OptiMOS
Input Capacitance:2220pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

2500

11.1771

27942.75

5000

9.0225

45112.5

7500

8.9567

67175.25

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