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IPD60R460CEAUMA1

  • IPD60R460CEAUMA1
  • IPD60R460CEAUMA1
IPD60R460CEAUMA1
Mosfets
Infineon
N-Channel 650 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:460mΩ
Rated Power Dissipation:102W
Qg Gate Charge:28nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:13.1A
Turn-on Delay Time:11ns
Turn-off Delay Time:70ns
Rise Time:9ns
Fall Time:10ns
Operating Temp Range:-40°C to +150°C
Gate Source Threshold:3V
Technology:CoolMOS
Input Capacitance:620pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

2500

10.6005

26501.25

5000

8.5219

42609.5

7500

8.4561

63420.75

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