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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IPD65R225C7ATMA1
IPD65R225C7ATMA1
:
IPD65R225C7ATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
650V
Drain-Source On Resistance-Max:
225mΩ
Rated Power Dissipation:
63|W
Qg Gate Charge:
20nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2500
24.3568
60892
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