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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 0.4Ω |
| Rated Power Dissipation: | 118W |
| Qg Gate Charge: | 39nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 15.1A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 57ns |
| Rise Time: | 7ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | CoolMOS |
| Input Capacitance: | 710pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
2500
14.4645
36161.25
