IPI041N12N3GAKSA1 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IPI041N12N3GAKSA1


：	IPI041N12N3GAKSA1
：	Mosfets
：	Infineon
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	120V
Drain-Source On Resistance-Max:	4.1mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	158nC
Package Style:	TO-262 (I2PAK)
Mounting Method:	Through Hole

PDF(1)

54.7776

2738.88

1000

52.7612

52761.2

1500

52.6193

78928.95

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