IPP12CN10LGXKSA1 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IPP12CN10LGXKSA1


：	IPP12CN10LGXKSA1
：	Mosfets
：	Infineon
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	12mΩ
Rated Power Dissipation:	125\|W
Qg Gate Charge:	58nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

16.6189

830.945

1000

13.6805

13680.5

1500

13.5388

20308.2

2000

13.3973

26794.6

2500

13.3215

33303.75

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GTCS35-900M-R05

GDT- GTCC23-401M-R01-2

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7" 800x480 450nit Wifi Option, Mem 2G DDR3/SSD 32G Win 7, Tabl

Infineon

IPP12CN10LGXKSA1

Single N-Channel 100 V 12 mOhm 58 nC OptiMOS™ Power Mosfet - TO-220-3

Diodes Incorporated

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AZ32C27 Series 300 mW 27 V Dual Surface Mount Zener Diode - SOT-23

Vishay

AZ23C13-HE3-18

13V, 300MW, SOT23.

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30055-15

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OSRAM Digital Systems

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OT FIT 120/220-240/750 D LT2 L

Microchip

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MIC2562A Series 12 V 1.5 A PCMCIA/CardBus Socket Power Controller - SOIC-14N

Yageo

RC2512FK-0722KL

RC Series 2512 1 W 22 kOhm ±1% ±100 ppm/°C SMT Thick Film Chip Resistor

Advantech

SQF-UDMS1-32G-HDE

Managed NAND SQF UDM 32G SLC HOR TYPE D (-40~85 C)

Vicor Corporation

07818

160063-2

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