TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 75V |
Drain-Source On Resistance-Max: | 0.0078Ω |
Rated Power Dissipation: | 3.8W |
Qg Gate Charge: | 250nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 100A |
Turn-on Delay Time: | 11ns |
Turn-off Delay Time: | 150ns |
Rise Time: | 150ns |
Fall Time: | 140ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 5600pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
33.6626
26930.08
1600
27.2194
43551.04
2400
26.9361
64646.64