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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 8mΩ |
| Rated Power Dissipation: | 200W |
| Qg Gate Charge: | 146nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 110A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 50ns |
| Rise Time: | 101ns |
| Fall Time: | 65ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 3247pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
22.7789
18223.12
1600
18.48
29568
2400
18.3384
44012.16
3200
18.1968
58229.76
