TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 23mΩ |
Rated Power Dissipation: | 200W |
Qg Gate Charge: | 130nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 57A |
Turn-on Delay Time: | 12ns |
Turn-off Delay Time: | 45ns |
Rise Time: | 58ns |
Fall Time: | 47ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 4.83mm |
Length: | 9.65mm |
Input Capacitance: | 3130pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
24.4984
19598.72
1600
20.058
32092.8
2400
19.7647
47435.28
3200
19.623
62793.6