TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 18mΩ |
Rated Power Dissipation: | 160W |
Qg Gate Charge: | 82nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 59A |
Turn-on Delay Time: | 17ns |
Turn-off Delay Time: | 41ns |
Rise Time: | 77ns |
Fall Time: | 56ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Input Capacitance: | 2900pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
1
12.4379
12.4379
50
12.1442
607.21
200
12.0782
2415.64
750
12.0022
9001.65
2500
11.9363
29840.75