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IRF3808PBF

  • IRF3808PBF
  • IRF3808PBF
  • IRF3808PBF
  • IRF3808PBF
IRF3808PBF
Mosfets
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:75V
Drain-Source On Resistance-Max:7mΩ
Rated Power Dissipation:330W
Qg Gate Charge:220nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:140A
Turn-on Delay Time:16ns
Turn-off Delay Time:68ns
Rise Time:140ns
Fall Time:120ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:4V
Technology:Advanced Planar Technology
Height - Max:9.02mm
Length:10.67mm
Input Capacitance:5310pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

22.8595

1142.975

200

19.6981

3939.62

750

18.8367

14127.525

1250

18.6849

23356.125

2500

18.2592

45648

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