TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 0.15Ω |
Rated Power Dissipation: | 150W |
Qg Gate Charge: | 67nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 18A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 23ns |
Rise Time: | 19ns |
Fall Time: | 5.5ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 9.02mm |
Length: | 10.67mm |
Input Capacitance: | 1160pF |
Package Style: | TO-220-3 (TO-220AB) |
1
13.0813
13.0813
50
11.7185
585.925
200
11.2829
2256.58
750
10.8572
8142.9
2500
10.4975
26243.75