TYPE | DESCRIPTION |
Fet Type: | Dual N/P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 50mΩ/90mΩ |
Rated Power Dissipation: | 2W |
Qg Gate Charge: | 20nC/22nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 5.2A/4.3A |
Turn-on Delay Time: | 9ns/8.4ns |
Turn-off Delay Time: | 32ns/51ns |
Rise Time: | 42ns/26ns |
Fall Time: | 51ns/33ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 0.7V |
Technology: | Generation V |
Input Capacitance: | 660pF/610pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
8.2386
32954.4