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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.046Ω |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 33nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 6.5A |
| Turn-on Delay Time: | 8.1ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 8.9ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | Generation V |
| Height - Max: | 1.5mm |
| Length: | 5mm |
| Input Capacitance: | 650pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
9.0984
36393.6
8000
7.3031
58424.8
