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| TYPE | DESCRIPTION |
| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 12V |
| Drain-Source On Resistance-Max: | 17mΩ |
| Rated Power Dissipation: | 2|W |
| Qg Gate Charge: | 38nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 9.2A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 340ns |
| Rise Time: | 8.6ns |
| Fall Time: | 260ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.9V |
| Height - Max: | 1.5mm |
| Length: | 5mm |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
13.4631
53852.4
