TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 150V |
Drain-Source On Resistance-Max: | 0.28Ω |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 15nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 1.9A |
Turn-on Delay Time: | 7ns |
Turn-off Delay Time: | 10ns |
Rise Time: | 1.2ns |
Fall Time: | 9ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 5.5V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 330pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
7.0956
28382.4
8000
5.7351
45880.8
12000
5.6593
67911.6