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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 4.8mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 17nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 18A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 13ns |
| Rise Time: | 15ns |
| Fall Time: | 7.5ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.8V |
| Input Capacitance: | 2315pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
5.017
20068
8000
4.7237
37789.6
12000
4.5163
54195.6
16000
4.2988
68780.8
