TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 13.4mΩ |
Rated Power Dissipation: | 2|W |
Qg Gate Charge: | 7.4nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
7.0198
28079.2
8000
5.6593
45274.4
12000
5.5835
67002