TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | -100V |
Drain-Source On Resistance-Max: | 0.2Ω |
Rated Power Dissipation: | 3.8W |
Qg Gate Charge: | 58nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -14A |
Turn-on Delay Time: | 15ns |
Turn-off Delay Time: | 45ns |
Rise Time: | 58ns |
Fall Time: | 46ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | -4V |
Technology: | Advanced Process Technology |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 760pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
15.1826
12146.08
1600
12.3201
19712.16
2400
12.1784
29228.16
3200
12.1026
38728.32