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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IRFH5006TRPBF
IRFH5006TRPBF
:
IRFH5006TRPBF
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
60V
Drain-Source On Resistance-Max:
4.1mΩ
Rated Power Dissipation:
3.6|W
Qg Gate Charge:
69nC
Package Style:
PQFN 5 x 6 mm
Mounting Method:
Surface Mount
PDF(1)
4000
21.4843
85937.2
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