取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 25V |
| Drain-Source On Resistance-Max: | 21mΩ |
| Rated Power Dissipation: | 2.1W |
| Qg Gate Charge: | 4.3nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 9.9A |
| Turn-on Delay Time: | 6.5ns |
| Turn-off Delay Time: | 5.4ns |
| Rise Time: | 19ns |
| Fall Time: | 5.3ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.35V |
| Technology: | Si |
| Height - Max: | 1mm |
| Length: | 2.1mm |
| Input Capacitance: | 653pF |
| Package Style: | PQFN 2 x 2 mm |
| Mounting Method: | Surface Mount |
4000
3.2974
13189.6
8000
3.1558
25246.4
12000
2.9384
35260.8
16000
2.821
45136
