TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.075Ω |
Rated Power Dissipation: | 45W |
Qg Gate Charge: | 20nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 17A |
Turn-on Delay Time: | 4.9ns |
Turn-off Delay Time: | 19ns |
Rise Time: | 34ns |
Fall Time: | 27ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 370pF |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
3000
5.2245
15673.5
6000
5.017
30102
9000
4.7237
42513.3
12000
4.5163
54195.6