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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 39mΩ |
| Rated Power Dissipation: | 3W |
| Qg Gate Charge: | 56nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 31A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 40ns |
| Rise Time: | 27ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 1690pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
2000
12.0368
24073.6
4000
9.6649
38659.6
6000
9.5991
57594.6
