TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 11mΩ |
Rated Power Dissipation: | 91W |
Qg Gate Charge: | 60nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 62A |
Turn-on Delay Time: | 15ns |
Turn-off Delay Time: | 40ns |
Rise Time: | 61ns |
Fall Time: | 35ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 1720pF |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
2000
10.9596
21919.2
4000
10.383
41532
6000
9.8824
59294.4
8000
9.3816
75052.8