TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.11Ω |
Rated Power Dissipation: | 57W |
Qg Gate Charge: | 32nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 18A |
Turn-on Delay Time: | 12ns |
Turn-off Delay Time: | 20ns |
Rise Time: | 28ns |
Fall Time: | 16ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 650pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
2000
12.7449
25489.8
4000
10.3172
41268.8
6000
10.1756
61053.6