TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | -150V |
Drain-Source On Resistance-Max: | 0.58Ω |
Rated Power Dissipation: | 110W |
Qg Gate Charge: | 66nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -13A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 53ns |
Rise Time: | 36ns |
Fall Time: | 37ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | -4V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 860pF |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
2000
16.6189
33237.8
4000
13.2556
53022.4