TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 0.48Ω |
Rated Power Dissipation: | 40W |
Qg Gate Charge: | 27nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 6.6A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 28ns |
Rise Time: | 47ns |
Fall Time: | 31ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 350pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
2000
9.0984
18196.8
4000
7.4447
29778.8
6000
7.3789
44273.4
8000
7.3031
58424.8