TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 14mΩ |
Rated Power Dissipation: | 190W |
Qg Gate Charge: | 140nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 73A |
Turn-on Delay Time: | 18ns |
Turn-off Delay Time: | 53ns |
Rise Time: | 87ns |
Fall Time: | 70ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 3550pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
37.9612
30368.96
1600
30.3406
48544.96