TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 1Ω |
Rated Power Dissipation: | 3.1W |
Qg Gate Charge: | 16nC |
Gate-Source Voltage-Max [Vgss]: | 10V |
Drain Current: | 5.2A |
Turn-on Delay Time: | 4.2ns |
Turn-off Delay Time: | 18ns |
Rise Time: | 31ns |
Fall Time: | 17ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2V |
Technology: | Si |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 360pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
23.2976
18638.08
1600
18.9806
30368.96
2400
18.8387
45212.88
3200
18.6968
59829.76