IXFA4N100P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFA4N100P


：	IXFA4N100P
：	Mosfets
：	IXYS
：	N-Channel 1000
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1000V
Drain-Source On Resistance-Max:	3.3Ω
Rated Power Dissipation:	150\|W
Qg Gate Charge:	26nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

41.5443

2077.215

150

35.6571

5348.565

250

35.0795

8769.875

1000

33.6407

33640.7

1500

33.2151

49822.65

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