IXFA7N100P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFA7N100P


：	IXFA7N100P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1000V
Drain-Source On Resistance-Max:	1.8Ω
Rated Power Dissipation:	300\|W
Qg Gate Charge:	47nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

70.1592

3507.96

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59.6617

8949.255

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58.6585

14664.625

500

57.3614

28680.7

1000

56.0645

56064.5

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