IXFN170N30P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXFN170N30P


：	IXFN170N30P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	300V
Drain-Source On Resistance-Max:	1.8mΩ
Rated Power Dissipation:	890\|W
Qg Gate Charge:	258nC
Package Style:	SOT-227B
Mounting Method:	Chassis Mount

PDF(1)

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