IXTP130N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTP130N10T


：	IXTP130N10T
：	Mosfets
：	IXYS
：	N-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	9.1mΩ
Rated Power Dissipation:	360\|W
Qg Gate Charge:	104nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

60.3155

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