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IXTP4N80P

  • IXTP4N80P
  • IXTP4N80P
  • IXTP4N80P
  • IXTP4N80P
IXTP4N80P
Mosfets
IXYS
N-Channel 800 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:3.4mΩ
Rated Power Dissipation:100|W
Qg Gate Charge:14.2nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

25.1596

1257.98

200

21.5625

4312.5

500

20.985

10492.5

1250

20.4174

25521.75

2000

20.1237

40247.4

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