IXTQ52P10P Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTQ52P10P


：	IXTQ52P10P
：	Mosfets
：	IXYS
：	P-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	50mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	60nC
Package Style:	TO-3P
Mounting Method:	Surface Mount

PDF(1)

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