TYPE | DESCRIPTION |
Fet Type: | RF Fet |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 125V |
Rated Power Dissipation: | 232W |
Gate-Source Voltage-Max [Vgss]: | 8V |
Operating Temp Range: | -55°C to +125°C |
Gate Source Threshold: | 2.9V |
Technology: | SiC |
Input Capacitance: | 51pF |
Mounting Method: | Surface Mount |
50
6426.2839
321314.195