TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | -20V |
Drain-Source On Resistance-Max: | 1Ω |
Rated Power Dissipation: | 313mW |
Qg Gate Charge: | 2.1nC |
Gate-Source Voltage-Max [Vgss]: | 6V |
Drain Current: | -760mA |
Turn-on Delay Time: | 8ns |
Turn-off Delay Time: | 29ns |
Rise Time: | 8.2ns |
Fall Time: | 20.4ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -1.2V |
Technology: | Si |
Height - Max: | 0.8mm |
Length: | 1.7mm |
Input Capacitance: | 156pF |
Package Style: | SC-75 |
Mounting Method: | Surface Mount |
3000
1.1151
3345.3
9000
0.9231
8307.9
15000
0.9187
13780.5
45000
0.8986
40437
75000
0.8843
66322.5