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NTHD3100CT1G

  • NTHD3100CT1G
  • NTHD3100CT1G
NTHD3100CT1G
Mosfets
onsemi
N&P-Channel
-
Reel
-
TYPEDESCRIPTION
Fet Type:Dual N/P-Ch
No of Channels:2
Drain-to-Source Voltage [Vdss]:20V
Drain-Source On Resistance-Max:80mΩ
Rated Power Dissipation:1.1|W
Qg Gate Charge:2.3nC/7.4nC
Gate-Source Voltage-Max [Vgss]:12V/8V
Drain Current:2.9A/3.2A
Turn-on Delay Time:6.3ns/5.8ns
Turn-off Delay Time:9.6ns/16ns
Rise Time:10.7ns/11.7ns
Fall Time:1.5ns/12.4ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:1.2V/1.5V
Height - Max:1.1mm
Length:3.05mm
Input Capacitance:165pF/680pF
Mounting Method:Surface Mount
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