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| TYPE | DESCRIPTION |
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | -20V/20V |
| Drain-Source On Resistance-Max: | 70mΩ/150mΩ |
| Rated Power Dissipation: | 1.1W |
| Qg Gate Charge: | 7.9nC/8.9nC |
| Gate-Source Voltage-Max [Vgss]: | -8V/8V |
| Drain Current: | 4A/3.1A |
| Turn-on Delay Time: | 7.2ns/6.4ns |
| Turn-off Delay Time: | 15.7ns/16.4ns |
| Rise Time: | 15.9ns/16.9ns |
| Fall Time: | 4.6ns/15ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -1.2V/1.2V |
| Technology: | Si |
| Height - Max: | 1.1mm |
| Length: | 3.1mm |
| Input Capacitance: | 510pF/650pF |
| Package Style: | SMD-8 |
| Mounting Method: | Surface Mount |
3000
5.9638
17891.4
6000
5.68
34080
9000
5.3962
48565.8
12000
5.1024
61228.8
